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(Datasheet) FDS6994S

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Typical Characteristics for Q1
20
VGS = 10V
15
4.5V
3.5V
10
5 3.0V
0
0 0.5 1 1.5 2
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 11. On-Region Characteristics.
2.2
2
1.8
VGS = 3.5V
1.6
1.4
4.0V
4.5V
1.2
6.0V
1 10V
0.8
0
5 10 15
ID, DRAIN CURRENT (A)
20
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
ID = 6.9A
VGS = 10V
1.4
1.2
1
0.8
0.6
-50
-25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 13. On-Resistance Variation with
Temperature.
0.075
0.05
0.025
TA = 125oC
ID = 3.5A
TA = 25oC
0
2 4 6 8 10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
20
VDS = 5V
15
10
TA = 125oC
5
25oC
-55oC
0
1.5
2 2.5 3 3.5
VGS, GATE TO SOURCE VOLTAGE (V)
4
Figure 15. Transfer Characteristics.
100
VGS = 0V
10
1
0.1
0.01
TA = 125oC
25oC
-55°C
0.001
0.0001
0
0.2 0.4 0.6 0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6994S Rev C2(W)
Fairchild Semiconductor
Fairchild Semiconductor


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