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FDS6994S Datasheet

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FDS6994S datasheet pdf
Typical Characteristics for Q2
30
VGS = 10V
4.5V
20
3.5V
3.0V
2.5V
10
1.6
1.4
VGS = 3.0V
1.2 3.5V
4.0V
4.5V
6.0V
1 10V
0
0 0.5 1 1.5 2
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.4
ID = 8.2A
VGS = 10V
1.2
1
0.8
0.6
-50
-25 0
25 50 75 100
TJ, JUNCTION TEMPERATURE (oC)
125
Figure 3. On-Resistance Variation with
Temperature.
30
VDS = 5V
25
20
15
10
5
0
1
TA = 125oC
25oC
-55oC
1.5 2 2.5
VGS, GATE TO SOURCE VOLTAGE (V)
3
0.8
0
10 20
ID, DRAIN CURRENT (A)
30
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
ID = 4.1A
TA = 125oC
TA = 25oC
2468
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
VGS = 0V
1 TA = 125oC
25oC
0.1
0.01
-55oC
0.001
0
0.1 0.2 0.3 0.4 0.5
VSD, BODY DIODE FORWARD VOLTAGE (V)
0.6
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6994S Rev C2(W)
Fairchild Semiconductor
Fairchild Semiconductor



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