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(Datasheet) FDS6994S

MOSFET

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FDS6994S pdf
Electrical Characteristics (continued)
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Switching Characteristics
td(on) Turn-On Delay Time
tr Turn-On Rise Time
(Note 2)
VDD = 15 V, ID = 1 A,
VGS = 10V, RGEN = 6
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Q2:
VDS = 15 V, ID = 7.9 A, VGS = 5 V
Q1:
VDS = 15 V, ID = 6.5 A, VGS = 5 V
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
tRR
Reverse Recovery Time
IF = 8.2 A,
QRR Reverse Recovery Charge diF/dt = 300 A/µs
(Note 3)
tRR
Reverse Recovery Time
IF = 6.9 A,
QRR Reverse Recovery Charge diF/dt = 100 A/µs
(Note 3)
VSD Drain-Source Diode Forward VGS = 0 V, IS = 2.3 A
Voltage
VGS = 0 V, IS = 1.3 A
(Note 2)
(Note 2)
Q2
Q1
Q2
Q2
Q2
Q1
11 20 ns
11 20
8 16 ns
7 14
50 80 ns
27 43
17 31 ns
48
25 35 nC
8 12
6 nC
3
7 nC
3
2.3
1.3
25
19
23
10
0.4 7
0.53 1.2
A
ns
nC
ns
nC
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78°C/W when
mounted on a
0.5in2 pad of 2
oz copper
b) 125°C/W when
mounted on a
0.02 in2 pad of
2 oz copper
c) 135°C/W when
mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. See “SyncFET Schottky body diode characteristics” below.
FDS6994S Rev C2(W)
Fairchild Semiconductor
Fairchild Semiconductor


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