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FDS6994S Datasheet

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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Off Characteristics
BVDSS
Drain-Source Breakdown
Voltage
BVDSS
TJ
IDSS
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
IGSS Gate-Body Leakage
VGS = 0 V, ID = 1 mA
VGS = 0 V, ID = 250 uA
ID = 1 mA, Referenced to 25°C
ID = 250 µA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
VGS = ±16 V, VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID(on)
On-State Drain Current
VDS = VGS, ID = 1 mA
VDS = VGS, ID = 250 µA
ID = 1 mA, Referenced to 25°C
ID = 250 uA, Referenced to 25°C
VGS = 10 V, ID = 8.2A
VGS = 10 V, ID = 8.2 A, TJ = 125°C
VGS = 4.5 V, ID = 7.6 A
VGS = 10 V, ID = 6.9 A
VGS = 10 V, ID = 6.9 A, TJ = 125°C
VGS = 4.5 V, ID = 6.2 A
VGS = 10 V, VDS = 5 V
gFS Forward Transconductance
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
VDS = 10 V, ID = 8.2 A
VDS = 10 V, ID = 6.9 A
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
Crss Reverse Transfer Capacitance
RG Gate Resistance
VGS = 15 mV, f = 1.0 MHz
Type Min Typ Max Units
Q2 30
Q1 30
V
Q2
Q1
23
24
mV/°C
Q2
Q1
500
1
µA
All ±100 nA
Q2 1 1.5
Q1 1 1.9
3
3
V
Q2
Q1
–2
–5
mV/°C
Q2 10 15
15 24
11 17.5 m
Q1 16 21
24 33.5
19 26
Q2 30
Q1 20
A
Q2 42
Q1 41
S
Q2 2815
pF
Q1 800
Q2 540
pF
Q1 205
Q2 210
pF
Q1 90
Q2 2.844444.9
Q1 2.6 4.6
FDS6994S Rev C2(W)
Fairchild Semiconductor
Fairchild Semiconductor



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