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FDS6994S Datasheet

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FDS6994S pdf
October 2006
FDS6994S
Dual Notebook Power Supply N-Channel PowerTrenchSyncFet
General Description
The FDS6994S is designed to replace two single SO-8
MOSFETs and Schottky diode in synchronous DC:DC
power supplies that provide various peripheral voltages
for notebook computers and other battery powered
electronic devices. FDS6994S contains two unique
30V, N-channel, logic level, PowerTrench MOSFETs
designed to maximize power conversion efficiency.
The high-side switch (Q1) is designed with specific
emphasis on reducing switching losses while the low-
side switch (Q2) is optimized to reduce conduction
losses. Q2 also includes an integrated Schottky diode
using Fairchild’s monolithic SyncFET technology.
Features
Q2: Optimized to minimize conduction losses
Includes SyncFET Schottky body diode
8.2A, 30V
RDS(on) = 15 m@ VGS = 10V
RDS(on) = 17.5 m@ VGS = 4.5V
Q1: Optimized for low switching losses
Low gate charge (85.5 nC typical)
6.9A, 30V
RDS(on) = 21 m@ VGS = 10V
RDS(on) = 26 m@ VGS = 4.5V
D1
D1
D2
D2
SO-8
G1
S1
G2
S2
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
(Note 1a)
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6994S
FDS6994S
13”
2006 Fairchild Semiconductor Corporation
5
6 Q1
7
Q2
8
4
3
2
1
Q2 Q1
30 30
±16 ±16
8.2 6.9
30 20
2
1.6
1
0.9
-55 to +150
Units
V
V
A
W
°C
78 °C/W
40 °C/W
Tape width
12mm
Quantity
2500 units
FDS6994S Rev C2(W)
Fairchild Semiconductor
Fairchild Semiconductor


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