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FDS6990S Datasheet

Dual 30V N-Channel PowerTrench SyncFET

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FDS6990S pdf
May 2001
FDS6990S
Dual 30V N-Channel PowerTrench® SyncFET
General Description
The FDS6990S is designed to replace a dual SO-8
MOSFET and two Schottky diodes in synchronous
DC:DC power supplies. This 30V MOSFET is designed
to maximize power conversion efficiency, providing a
low RDS(ON) and low gate charge. Each MOSFET
includes integrated Schottky diodes using Fairchild’s
monolithic SyncFET technology. The performance of
the FDS6990S as the low-side switch in a synchronous
rectifier is similar to the performance of the FDS6990A
in parallel with a Schottky diode.
Applications
DC/DC converter
Motor drives
Features
7.5A, 30 V.
RDS(ON) = 22 m@ VGS = 10 V
RDS(ON) = 30 m@ VGS = 4.5 V
Includes SyncFET Schottky diode
Low gate charge (11 nC typical)
High performance trench technology for extremely low
RDS(ON)
High power and current handling capability
DD1
DD1
DD2
DD2
SO-8
Pin 1 SO-8
SS2GS2SS1GG1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6990S
FDS6990S
13’’
©2001 Fairchild Semiconductor Corporation
5
Q1
6
7
Q2
8
Ratings
30
±20
7.5
20
2
1.6
1
0.9
–55 to +150
78
40
Tape width
12mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
FDS6990S Rev B(W)
Fairchild Semiconductor
Fairchild Semiconductor



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