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(Datasheet) FDS6990AS

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FDS6990AS pdf
Typical Characteristics
10
ID =7.5A
8
VDS = 10V
6
15V
4
20V
2
0
0 2 4 6 8 10
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
12
100
RDS(ON) LIMIT
10
1
VGS = 10V
0.1 SINGLE PULSE
RθJA = 135 oC/W
TA = 25oC
100 µs
1ms
10ms
100s
1s
10s
DC
0.01
0.1
1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
1000
Ciss
100 Coss
20
0.1
f = 1 MHz
VGS = 0 V
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
30
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
R θJA = 135°C/W
40 TA = 25°C
30
20
10
0
0.001
0.01
0.1 1
t1, TIME (sec)
10
100
Figure 10. Single Pulse Maximum
Power Dissipation.
1000
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA(t) = r(t) * Rθ JA
RθJA = 135 °C/W
P(pk)
t1
t2
TJ – TA = P * RθJA(t)
Duty Cycle, D = t 1 / t2
0.001
0.0001
0.001
0.01
0.1 1
t1, TIME (sec)
10
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
100
1000
FDS6990AS Rev. A2
5
www.fairchildsemi.com
Fairchild Semiconductor
Fairchild Semiconductor


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