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FDS6990AS Datasheet
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FDS6990AS pdf
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
BVDSS
TJ
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate–Body Leakage
On Characteristics (Note 2)
VGS = 0 V, ID = 1 mA
ID = 1 mA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VGS(th)
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS Forward Transconductance
Dynamic Characteristics
VDS = VGS, ID = 1 mA
ID = 1 mA, Referenced to 25°C
VGS = 10 V, ID = 7.5 A
VGS = 10 V, ID = 7.5 A, TJ = 125°C
VGS = 4.5 V, ID = 6.5 A
VGS = 10 V, VDS = 5 V
VDS = 15 V, ID = 10 A
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
RG Gate Resistance
Switching Characteristics (Note 2)
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
VGS = 15 mV, f = 1.0 MHz
td(on)
tr
Turn–On Delay Time
Turn–On Rise Time
VDS = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6
td(off)
Turn–Off Delay Time
tf Turn–Off Fall Time
td(on)
tr
Turn–On Delay Time
Turn–On Rise Time
VDS = 15 V, ID = 1 A,
VGS = 4.5 V, RGEN = 6
td(off)
Turn–Off Delay Time
tf Turn–Off Fall Time
Qg(TOT) Total Gate Charge at Vgs = 10V
VDD = 15 V, ID = 10 A, VGS = 5 V
Qg Total Gate Charge at Vgs = 5V
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD Drain–Source Diode Forward VGS = 0 V, IS = 2.3 A (Note 2)
Voltage
trr
Diode Reverse Recovery Time
IF = 10A,
Qrr Diode Reverse Recovery Charge diF/dt = 300 A/µs
(Note 3)
Min
30
1
20
Typ
31
1.7
–3
17
26
21
29
550
162
60
3.1
8
5
24
4
9
8
14
5
10
6
1.5
2.0
0.6
18
11
Max Units
V
mV/°C
500
±100
µA
nA
3V
mV/°C
22 m
35
28
A
S
pF
pF
pF
16 ns
10 ns
38 ns
8 ns
18 ns
16 ns
24 ns
10 ns
14 nC
8 nC
nC
nC
2.9 A
0.7 V
nS
nC
FDS6990AS Rev. A2
2
www.fairchildsemi.com

FDS6990AS Datasheet PDF



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