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FDS6990AS Datasheet

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FDS6990AS pdf
M
FDS6990AS
Dual 30V N-Channel PowerTrench® SyncFET™
March 2010
Features
7.5 A, 30 V. RDS(ON) = 22 m@ VGS = 10 V
RDS(ON) = 28 m@ VGS = 4.5 V
Includes SyncFET Schottky diode
Low gate charge (10nC typical)
High performance trench technology for extremely low
RDS(ON)
High power and current handling capability
Applications
DC/DC converter
Motor drives
General Description
The FDS6990AS is designed to replace a dual SO-8 MOSFET
and two Schottky diodes in synchronous DC:DC power sup-
plies. This 30V MOSFET is designed to maximize power con-
version efficiency, providing a low RDS(ON) and low gate charge.
Each MOSFET includes integrated Schottky diodes using Fair-
child’s monolithic SyncFET technology. The performance of the
FDS6990AS as the low-side switch in a synchronous rectifier is
similar to the performance of the FDS6990A in parallel with a
Schottky diode.
D1
D1
D2
D2
SO-8
Pin 1
G1
S1
G2
S2
5
Q1
6
7 Q2
8
4
3
2
1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1)
Ratings
30
±20
7.5
20
2
1.6
1
0.9
–55 to +150
78
40
Package Marking and Ordering Information
Device Marking
FDS6990AS
Device
FDS6990AS
Reel Size
13"
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
©2010 Fairchild Semiconductor Corporation
FDS6990AS Rev. A2
1
www.fairchildsemi.com
Fairchild Semiconductor
Fairchild Semiconductor



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