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FDS6990A Datasheet

Dual N-Channel Logic Level PowerTrenchTM MOSFET

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FDS6990A pdf
June 1999
FDS6990A
Dual N-Channel Logic Level PowerTrenchΤΜ MOSFET
General Description
Features
These N-Channel Logic Level MOSFETs are
produced using Fairchild Semiconductor's
advanced PowerTrench process that has been
especially tailored to minimize the on-state
resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line
power loss and fast switching are required.
7.5 A, 30 V. RDS(ON) = 0.018 @ VGS = 10 V
RDS(ON) = 0.023 @ VGS = 4.5 V.
Fast switching speed.
Low gate charge (typical 18nC).
High performance trench technology for
extremely low R .DS(ON)
High power and current handling capability.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
D2
D2
D1
D1
F6D9S90A
SO-8
G2
S2
pin 1
G1
S1
Absolute Maximum Ratings TA = 25oC unless otherwise noted
Symbol Parameter
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
(Note 1a)
PD Power Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient (Note 1a)
Thermal Resistance, Junction-to-Case
(Note 1)
©1999 Fairchild Semiconductor
54
63
72
81
Ratings
30
±20
7.5
20
2
1.6
0.9
-55 to 150
78
40
Units
V
V
A
W
°C
°C/W
°C/W
FDS6990A Rev.C1
Fairchild Semiconductor
Fairchild Semiconductor



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