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FDS6699S Datasheet

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Typical Characteristics (continued)
SyncFET Schottky Body Diode Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in paral-
lel with PowerTrench MOSFET. This diode exhibits similar char-
acteristics to a discrete external Schottky diode in parallel with a
MOSFET. Figure 12 shows the reverse recovery characteristic
of the FDS6699S.
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
0.1
0.01
0.001
TA = 125 oC
TA = 100 oC
TIME : 12.5ns/div
Figure 12. FDS6699S SyncFET body
diode reverse recovery characteristic.
0.0001
0.00001
0
TA = 25oC
5 10 15 20
VDS, REVERSE VOLTAGE (V)
25
30
Figure 13. SyncFET body diode reverse leakage
versus drain-source voltage and temperature.
FDS6699S Rev. D3
5 www.fairchildsemi.com
Fairchild Semiconductor
Fairchild Semiconductor



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