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FDS6699S Datasheet

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FDS6699S pdf
Typical Characteristics (continued)
10
ID = 21A
8
6
4
VDS = 10V
20V
15V
2
0
0 10 20 30 40 50 60 70
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
5000
4000
3000
f = 1MHz
VGS = 0 V
Ciss
2000
1000
Crss
Coss
0
0 5 10 15 20 25 30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
1000
RDS(ON) LIMIT
100
100us
1ms
10 10ms
100ms
1s
10s
1 DC
VGS = 10V
SINGLE PULSE
0.1 RθJA = 125° C/W
TA = 25°C
0.01
0.01 0.1 1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
50
SINGLE PULSE
RθJA = 125°C/W
40 TA = 25°C
30
20
10
0
0.001
0.01
0.1 1
t1, TIME (sec)
10
100
Figure 10. Single Pulse Maximum
Power Dissipation.
1000
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
0.0001
SINGLE PULSE
0.001
0.01
0.1
t1, TIME (sec)
1
RθJA(t) = r(t) * RθJA
RθJA = 125 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA (t)
Duty Cycle, D = t1/t2
10 100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6699S Rev. D3
4 www.fairchildsemi.com
Fairchild Semiconductor
Fairchild Semiconductor


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