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FDS6699S Datasheet
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FDS6699S pdf
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
BVDSS
TJ
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate–Body Leakage
On Characteristics (Note 2)
VGS = 0 V, ID = 1 mA
ID = 1 mA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
30
28
V
mV/°C
500
±100
µA
nA
VGS(th)
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage Temperature
Coefficient
Static Drain–Source
On–Resistance
gFS Forward Transconductance
Dynamic Characteristics
VDS = VGS, ID = 1 mA
ID = 1 mA, Referenced to 25°C
VGS = 10 V, ID = 21 A
VGS = 4.5 V, ID = 19 A
VGS=10 V, ID =21 A, TJ=150°C
VDS = 10 V, ID = 21 A
1 1.4 3
V
–3.2 mV/°C
3.0 3.6
3.6 4.5
4.6 5.6
100
m
S
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
RG Gate Resistance
Switching Characteristics (Note 2)
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
VGS = 15 mV, f = 1.0 MHz
3610 4800
1080 1435
340 680
0.4 1.8 3.1
pF
pF
pF
td(on)
tr
Turn–On Delay Time
Turn–On Rise Time
VDD = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6
td(off)
Turn–Off Delay Time
tf Turn–Off Fall Time
Qg(TOT) Total Gate Charge at Vgs = 10V
VDD = 15 V, ID = 21 A,
Qg Total Gate Charge at Vgs = 5V
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
Drain–Source Diode Characteristics and Maximum Ratings
11 20
12 22
73 117
38 61
65 91
35 49
9
11
ns
ns
ns
ns
nC
nC
nC
nC
VSD
Drain–Source Diode Forward Voltage
VGS = 0 V, IS = 3.5 A
(Note 2)
trr Diode Reverse Recovery Time
IF = 21 A,
IRM
Diode Reverse Recovery Current
diF/dt = 300 A/µs
(Note 3)
Qrr Diode Reverse Recovery Charge
0.36 0.7
32
2.2
35
V
ns
A
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°/W when mounted
on a 1 in2 pad of 2 oz
copper
b) 105°/W when mounted
on a .04 in2 pad of 2 oz
copper
c) 125°/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. See “SyncFET Schottky body diode characteristics” below.
4. EAS of 541 mJ is based on starting TJ = 25 °C, L = 3 mH, IAS = 19 A, VDD = 30 V, VGS = 10 V. 100% test at L = 1 mH, IAS = 25 A.
FDS6699S Rev. D32
2
www.fairchildsemi.com

FDS6699S Datasheet PDF



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