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FDS6699S Datasheet

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FDS6699S pdf
FDS6699S
30V N-Channel PowerTrench® SyncFET™
December 2012
Features
21 A, 30 V Max RDS(ON) = 3.6 m@ VGS = 10 V
Max RDS(ON) = 4.5 m@ VGS = 4.5 V
Includes SyncFET Schottky body diode
High performance trench technology for extremely low
RDS(ON) and fast switching
High power and current handling capability
100% RG (Gate Resistance) tested
Applications
Synchronous Rectifier for DC/DC Converters –
Notebook Vcore low side switch
Point of Load low side switch
General Description
The FDS6699S is designed to replace a single SO-8 MOSFET
and Schottky diode in synchronous DC:DC power supplies.
This 30V MOSFET is designed to maximize power conversion
efficiency, providing a low RDS(ON) and low gate charge. The
FDS6699S includes an integrated Schottky diode using Fair-
child’s monolithic SyncFET technology.
D
D
D
D
SO-8
G
SS
S
54
63
72
81
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
EAS
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Single Pulse Avalanche Energy
Power Dissipation for Single Operation
(Note 1a)
(Note 4)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Ratings
30
±20
21
105
541
2.5
1.2
1
–55 to +150
50
25
Package Marking and Ordering Information
Device Marking
FDS6699S
Device
FDS6699S
Reel Size
13’’
Tape width
12mm
Units
V
V
A
mJ
W
°C
°C/W
Quantity
2500 units
©2012 Fairchild Semiconductor Corporation
FDS6699S Rev. D33
1
www.fairchildsemi.com
Fairchild Semiconductor
Fairchild Semiconductor



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