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FDS6692A Datasheet

N-Channel PowerTrench MOSFET

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FDS6692A pdf
January 2010
FDS6692A
N-Channel PowerTrench® MOSFET
30V, 9A, 11.5m
Features
„ RDS(ON) = 11.5m, VGS = 10V, ID = 9A
„ RDS(ON) = 14.5m, VGS = 4.5V, ID = 8.2A
„ High performance trench technology for extremely low
RDS(ON)
„ Low gate charge
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
RDS(ON) and fast switching speed.
„ High power and current handling capability
„ RoHS Compliant
Applications
„ DC/DC converters
DD
D
D
SO-8
S SSG
54
63
72
81
©2010 Fairchild Semiconductor Corporation
FDS6692A Rev. A2
1
www.fairchildsemi.com
Fairchild Semiconductor
Fairchild Semiconductor



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