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FDS6690A Datasheet

Single N-Channel / Logic-Level / PowerTrench MOSFET

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FDS6690A datasheet pdf
February 2007
FDS6690A
Single N-Channel, Logic-Level, PowerTrench® MOSFET
tm
General Description
This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor’s
advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
11 A, 30 V.
RDS(ON) = 12.5 m@ VGS = 10 V
RDS(ON) = 17.0 m@ VGS = 4.5 V
Fast switching speed
Low gate charge
High performance trench technology for extremely
low RDS(ON)
High power and current handling capability
DD DDDD
DD
SO-8
Pin 1 SO-8
SS SS SS GG
54
63
72
81
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
EAS
TJ, TSTG
Single Pulse Avalanche Energy
(Note 3)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1b)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6690A
FDS6690A
13’’
Ratings
30
±20
11
50
2.5
1.0
96
–55 to +150
50
125
25
Tape width
12mm
Units
V
V
A
W
mJ
°C
°C/W
Quantity
2500 units
©2007 Fairchild Semiconductor Corporation
FDS6690A Rev E1 (W)
Fairchild Semiconductor
Fairchild Semiconductor



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