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FDS6690 Datasheet

Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET

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FDS6690 pdf
January 2000
FDS6690
Single N-Channel Logic Level PWM Optimized PowerTrench® MOSFET
General Description
This N Channel Logic Level MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional switching
PWM controllers.
The MOSFET features faster switching and lower gate charge
than other MOSFETs with comparable RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive (even at
very high frequencies), and DC/DC power supply designs with
higher overall efficiency.
Features
10 A, 30 V. RDS(ON) = 0.0135 @ VGS = 10 V
RDS(ON) = 0.0200 @ VGS = 4.5 V.
Optimized for use in switching DC/DC converters with
PWM controllers.
Very fast switching .
Low gate charge (Qg typ = 13 nC).
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
D
D
D
D
FD66S90
SO-8
pin 1
S
G
S
S
Absolute Maximum Ratings
Symbol Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
TA = 25oC unless other wise noted
(Note 1a)
PD Power Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJC Thermal Resistance, Junction-to-Case (Note 1)
© 1998 Fairchild Semiconductor Corporation
5
6
7
8
FDS6690
30
±20
10
50
2.5
1.2
1
-55 to 150
50
25
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
FDS6690 Rev.C
Fairchild Semiconductor
Fairchild Semiconductor


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