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FDPC8016S Datasheet

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Typical Characteristics (Q2 N-Channel) TJ = 25 °C unless otherwise noted
140
120
100
80
60
40
20
0
0.0
VGS = 10 V
VGS = 4.5 V
VGS = 3.5 V
VGS = 3 V
VGS = 2.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0.2 0.4 0.6
VDS, DRAIN TO SOURCE VOLTAGE (V)
0.8
Figure 14. On- Region Characteristics
6.0
VGS = 2.5 V
4.5
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
3.0
VGS = 3 V
1.5
0.0
0
VGS = 3.5 V VGS = 4.5 V VGS = 10 V
20 40 60 80 100 120 140
ID, DRAIN CURRENT (A)
Figure 15. Normalized on-Resistance vs. Drain
Current and Gate Voltage
1.6
1.5
ID = 35 A
VGS = 10 V
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 16. Normalized On-Resistance
vs. Junction Temperature
5
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
4
ID = 35 A
3
2
TJ = 125 oC
1
TJ = 25 oC
0
1 2 3 4 5 6 7 8 9 10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 17. On-Resistance vs. Gate to
Source Voltage
140
VDS = 5 V
120
100
TJ = 125 oC
80
60
TJ = 25 oC
TJ = -55 oC
40
20
0
1
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
23
VGS, GATE TO SOURCE VOLTAGE (V)
4
Figure 18. Transfer Characteristics
200
100 VGS = 0 V
10
1
0.1
0.01
TJ = 125 oC
TJ = 25 oC
TJ = -55 oC
0.001
0.0
0.2 0.4 0.6 0.8
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.0
Figure 19. Source to Drain Diode
Forward Voltage vs. Source Current
©2013 Fairchild Semiconductor Corporation
FDPC8016S Rev.C7
7
www.fairchildsemi.com
Fairchild Semiconductor
Fairchild Semiconductor



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