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FDPC8016S Datasheet
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FDPC8016S pdf
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted
10
ID = 20 A
8
VDD = 13 V
6
VDD = 10 V
4
VDD = 15 V
2
0
0 6 12 18 24 30
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
10000
1000
Ciss
100
f = 1 MHz
VGS = 0 V
Coss
Crss
10
0.1
1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
25
Figure8. Capacitancevs.Drain
to Source Voltage
30
TJ = 25 oC
10
TJ = 100 oC
TJ = 125 oC
1
0.001
0.01 0.1 1 10
tAV, TIME IN AVALANCHE (ms)
Figure9. UnclampedInductive
Switching Capability
100
70
60
50
VGS = 10 V
40
VGS = 4.5 V
30
20
RθJC = 6.0 oC/W
10
0
25 50 75 100 125
TC, CASE TEMPERATURE (oC)
150
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
500
100
10 μs
10
THIS AREA IS
LIMITED BY rDS(on)
1
SINGLE PULSE
TJ = MAX RATED
RθJC = 6.0 oC/W
TC = 25 oC
CURVE BENT TO
MEASURED DATA
0.1
0.1 1 10
100 μs
1 ms
10 ms
DC
80
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
5000
1000
100
SINGLE PULSE
RθJC = 6.0 oC/W
TC = 25 oC
10
10-5 10-4 10-3 10-2 10-1
t, PULSE WIDTH (sec)
Figure 12. Single Pulse Maximum
Power Dissipation
1
©2013 Fairchild Semiconductor Corporation
FDPC8016S Rev.C7
5
www.fairchildsemi.com

FDPC8016S Datasheet PDF



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