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(Datasheet) FDPC8016S

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FDPC8016S pdf
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted
75
60
45
30
15
0
0.0
VGS = 10 V
VGS = 4.5 V
VGS = 3.5 V
VGS = 3 V
VGS = 2.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0.2 0.4 0.6 0.8
VDS, DRAIN TO SOURCE VOLTAGE (V)
1.0
Figure 1. On Region Characteristics
5
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
4
3
VGS = 2.5 V
2 VGS = 3 V
1
VGS = 3.5 V
VGS = 4.5 V
VGS = 10 V
0
0 15 30 45 60 75
ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs. Drain Current and Gate Voltage
1.6
1.5
ID = 20 A
VGS = 10 V
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance
vs. Junction Temperature
12
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
9
ID = 20 A
6
TJ = 125 oC
3
TJ = 25 oC
0
1 2 3 4 5 6 7 8 9 10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs. Gate to
Source Voltage
75
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
60
VDS = 5 V
45
30
15
0
1.0
TJ = 150 oC
TJ = 25 oC
TJ = -55 oC
1.5 2.0 2.5
VGS, GATE TO SOURCE VOLTAGE (V)
3.0
Figure 5. Transfer Characteristics
100
VGS = 0 V
10
1
TJ = 150 oC
0.1
TJ = 25 oC
0.01
0.001
0.0
TJ = -55 oC
0.2 0.4 0.6 0.8
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.0
Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
©2013 Fairchild Semiconductor Corporation
FDPC8016S Rev.C7
4
www.fairchildsemi.com
Fairchild Semiconductor
Fairchild Semiconductor


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