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FDPC8016S Datasheet

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FDPC8016S pdf
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 20 A
VGS = 0 V, IS = 35 A
(Note 2)
(Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Q1
IF = 20 A, di/dt = 100 A/μs
Q2
IF = 35 A, di/dt = 200 A/μs
Q1
Q2
Q1
Q2
Q1
Q2
0.8 1.2
0.8 1.2
25 40
33 53
10 20
31 50
V
ns
nC
Notes:
1.RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 60 °C/W when mounted on
a 1 in2 pad of 2 oz copper
b. 55 °C/W when mounted on
a 1 in2 pad of 2 oz copper
c. 130 °C/W when mounted on a
minimum pad of 2 oz copper
d. 120 °C/W when mounted on a
minimum pad of 2 oz copper
2 Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Q1 :EAS of 73 mJ is based on starting TJ = 25 oC; N-ch: L = 3 mH, IAS = 7 A, VDD = 30 V, VGS = 10 V. 100% test at L= 0.1 mH, IAS = 24 A.
Q2: EAS of 216 mJ is based on starting TJ = 25 oC; N-ch: L = 3 mH, IAS = 12 A, VDD = 25 V, VGS = 10 V. 100% test at L= 0.1 mH, IAS = 39 A.
4. Pulsed Id limited by junction temperature, td<=10 us. Please refer to SOA curve for more details.
5. The continuous VDS rating is 25 V; However, a pulse of 30 V peak voltage for no longer than 100 ns duration at 600 KHz frequency can be applied.
©2013 Fairchild Semiconductor Corporation
FDPC8016S Rev.C7
3
www.fairchildsemi.com
Fairchild Semiconductor
Fairchild Semiconductor



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