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FDPC8016S Datasheet

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FDPC8016S pdf
Typical Characteristics (continued)
SyncFETTM Schottky body diode
Characteristics
Fairchild’s SyncFETTM process embeds a Schottky diode in
parallel with PowerTrench® MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 27 shows the reverses recovery
characteristic of the FDPC8016S.
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
40
35
30
25
20
15
10
5
0
-5
50
di / dt = 200 A/μS
100 150 200 250 300 350 400
TIME (ns)
10-2
10-3
10-4
10-5
10-6
0
TJ = 125 oC
TJ = 100 oC
TJ = 25 oC
5 10 15 20
VDS, REVERSE VOLTAGE (V)
25
Figure 27. FDPC8016S SyncFETTM Body
Diode Reverse Recovery Characteristic
Figure 28. SyncFETTM Body Diode Reverse
Leakage vs. Drain-source Voltage
©2013 Fairchild Semiconductor Corporation
FDPC8016S Rev.C7
10
www.fairchildsemi.com
Fairchild Semiconductor
Fairchild Semiconductor


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