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FDPC8011S Datasheet

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FDPC8011S
PowerTrench® Power Clip
25V Asymmetric Dual N-Channel MOSFET
October 2014
Features
General Description
Q1: N-Channel
„ Max rDS(on) = 7.3 mΩ at VGS = 4.5 V, ID = 12 A
Q2: N-Channel
„ Max rDS(on) = 2.1 mΩ at VGS = 4.5 V, ID = 24 A
„ Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
„ MOSFET integration enables optimum layout for lower circuit
inductance and reduced switch node ringing
„ RoHS Compliant
This device includes two specialized N-Channel MOSFETs in a
dual package. The switch node has been internally connected to
enable easy placement and routing of synchronous buck
converters. The control MOSFET (Q1) and synchronous
SyncFETTM (Q2) have been designed to provide optimal power
efficiency.
Applications
„ Computing
„ Communications
„ General Purpose Point of Load
Pin 1
Top
V+
LS
Pin 1
GND
GND
V+
(HSD
HSG
GND
(LSS
HSG SW
SW
SW
SW
SW
3.3 mm x 3.3 mm
Bottom
SW
PAD9
V+(HSD)
PAD10
GND(LSS)
V+ HSG
LSG SW
GND SW
GND SW
SW
V+
LSG
GND
GND
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Characteristics
TC = 25 °C
TA = 25 °C
(Note 3)
TA = 25 °C
TA = 25 °C
Q1 Q2
25 25
12 12
20
131a
60
271b
40 120
21
1.61a
0.81c
97
2.01b
0.91d
-55 to +150
Units
V
V
A
mJ
W
°C
RθJA
RθJA
RθJC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Package Marking and Ordering Information
771a
1511c
5.0
631b
1351d
3.5
°C/W
Device Marking
13OD/15OD
Device
FDPC8011S
Package
Power Clip 33
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDPC8011S Rev.C6
1
www.fairchildsemi.com
Fairchild Semiconductor
Fairchild Semiconductor


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