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(Datasheet) FDMS3686S

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Typical Characteristics (Q2 N-Channel) TJ = 25 oC unlenss otherwise noted
100
VGS = 10 V
80
VGS = 4.5 V
VGS = 4 V
60
VGS = 3.5 V
40
VGS = 3 V
20
0
0.0
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0.2 0.4 0.6 0.8
VDS, DRAIN TO SOURCE VOLTAGE (V)
1.0
Figure 14. On-Region Characteristics
4
PULSE DURATION = 80 μs
VGS = 3 V
DUTY CYCLE = 0.5% MAX
3
VGS = 3.5 V
2 VGS = 4 V
VGS = 4.5 V
1
VGS = 10 V
0
0 20 40 60 80 100
ID, DRAIN CURRENT (A)
Figure 15. Normalized on-Resistance vs Drain
Current and Gate Voltage
1.6
ID = 23 A
1.4 VGS = 10 V
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 16. Normalized On-Resistance
vs Junction Temperature
12
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
9
ID = 23 A
6
TJ = 125 oC
3
TJ = 25 oC
0
2 4 6 8 10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 17. On-Resistance vs Gate to
Source Voltage
100
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
80
VDS = 5 V
60
40
20
0
1.5
TJ = 125 oC
TJ = 25 oC
TJ = -55 oC
2.0 2.5 3.0 3.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 18. Transfer Characteristics
4.0
100
VGS = 0 V
10 TJ = 125 oC
1
0.1
0.01
TJ = 25 oC
TJ = -55 oC
0.001
0.0 0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 19. Source to Drain Diode
Forward Voltage vs Source Current
1.2
©2012 Fairchild Semiconductor Corporation
FDMS3686S Rev.C1
7
www.fairchildsemi.com
Fairchild Semiconductor
Fairchild Semiconductor


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