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FDMS3686S Datasheet
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FDMS3686S pdf
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Drain-Source Diode Characteristics
VGS = 0 V, IS = 2 A
(Note 2) Q1
VSD
Source to Drain Diode
Forward Voltage
VGS = 0 V, IS = 13 A
VGS = 0 V, IS = 2 A
(Note 2) Q1
(Note 2) Q2
VGS = 0 V, IS = 23 A
(Note 2) Q2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Q1
IF = 13 A, di/dt = 100 A/μs
Q2
IF = 23 A, di/dt = 300 A/μs
Q1
Q2
Q1
Q2
0.72
0.82
0.58
0.76
1.2
1.2
1.2
1.2
25 40
25 39
9 18
23 36
V
ns
nC
Notes:
1. RqJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RqJC is guaranteed by design while RqCA is determined
by the user's board design.
a. 57 °C/W when mounted on
a 1 in2 pad of 2 oz copper
b. 50 °C/W when mounted on
a 1 in2 pad of 2 oz copper
c. 125 °C/W when mounted on a
minimum pad of 2 oz copper
d. 120 °C/W when mounted on a
minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
4.
Q1:
Q2:
EAS
EAS
of
of
40
60
mJ
mJ
is
is
based
based
on
on
starting
starting
TJ
TJ
=
=
25
25
oC;
oC;
N-ch:
N-ch:
L
L
=
=
1
1
mH,
mH,
IAS
IAS
=
=
9 A, VDD = 27 V, VGS = 10 V. 100% test at L= 0.3 mH, IAS = 14 A.
11 A, VDD = 27 V, VGS = 10 V. 100% test at L= 0.3 mH, IAS = 17 A.
©2012 Fairchild Semiconductor Corporation
FDMS3686S Rev.C1
3
www.fairchildsemi.com

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