Home >> FDMS3686S Search >> Fairchild Semiconductor FDMS3686S Datasheet

FDMS3686S Datasheet

MOSFET

No Preview Available !

FDMS3686S pdf
Typical Characteristics (continued)
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 27 shows the reverse recovery
characteristic of the FDMS3686S.
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
25
20
15
10
5
0
-5
0
didt = 300 A/μs
50 100
TIME (ns)
150
200
Figure 27. FDMS3686S SyncFET body
diode reverse recovery characteristic
10-2
TJ = 125 oC
10-3
TJ = 100 oC
10-4
10-5 TJ = 25 oC
10-6
0
5 10 15 20 25
VDS, REVERSE VOLTAGE (V)
30
Figure 28. SyncFET body diode reverse
leakage versus drain-source voltage
©2012 Fairchild Semiconductor Corporation
FDMS3686S Rev.C1
10
www.fairchildsemi.com
Fairchild Semiconductor
Fairchild Semiconductor


PDF Click to Download PDF File

PDF View for Mobile




Related Start with FDMS3686*

[ FDMS3686S Fairchild Semiconductor ]     [ FDMS3686S Fairchild Semiconductor ]    


Searches related to FDMS3686S part

Find Chips CBC RS online RUTRONIK 24
Component Distributors NexGen Digital Richardson RFPD ICC
Beyond Components NAC PEI-Genesis Powell Electronics
TME Ameya 360 Power & Signal Datasheets360
Freelance Electronics Sager Electronics Terminals & Connectors TTI

0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z
@ 2014 :: DatasheetsPDF.com :: Semiconductors Datasheet Search & Download Site