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FDMS3669S Datasheet

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Typical Characteristics (Q2 N-Channel) TJ = 25 oC unless otherwise noted
10
ID = 17 A
8
VDD = 10 V
6
VDD = 15 V
4
VDD = 20 V
2
0
0 10 20
Qg, GATE CHARGE (nC)
30
Figure 20. Gate Charge Characteristics
10000
1000
Ciss
Coss
100
f = 1 MHz
VGS = 0 V
Crss
10
0.1
1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 21. Capacitance vs Drain
to Source Voltage
100 80
TJ = 100 oC
10
TJ = 125 oC
TJ = 25 oC
60 VGS = 10 V
VGS = 4.5 V
40
Limited by Package
RθJC = 2.8 oC/W
20
1
1E-3
0.01 0.1 1 10
tAV, TIME IN AVALANCHE (ms)
100
Figure 22. Unclamped Inductive
Switching Capability
100
100 μs
10
1 THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
0.1 TJ = MAX RATED
RθJA = 120 oC/W
TA = 25 oC
0.01
0.01
0.1
CURVE BENT ON
MEASURED DATA
1 10
1 ms
10 ms
100 ms
1s
10s
DC
100200
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 24. Forward Bias Safe
Operating Area
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
Figure 23. Maximun Continuous Drain
Current vs Case Temperature
2000
1000
100
SINGLE PULSE
RθJA = 120 oC/W
10
1
0.150-4 10-3 10-2 10-1 100 101 100 1000
t, PULSE WIDTH (sec)
Figure 25. Single Pulse Maximum
Power Dissipation
©2013 Fairchild Semiconductor Corporation
FDMS3669S Rev.C1
8
www.fairchildsemi.com
Fairchild Semiconductor
Fairchild Semiconductor



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