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FDMS3669S Datasheet
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FDMS3669S pdf
Typical Characteristics (Q1 N-Channel) TJ = 25 °C unless otherwise noted
10
ID = 13 A
8
VDD = 10 V
6
VDD =15 V
VDD = 20 V
4
2000
1000
100
Ciss
Coss
2
0
0 3 6 9 12 15 18
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
f = 1 MHz
VGS = 0 V
Crss
10
0.1
1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure8. Capacitance vsDrain
to Source Voltage
25
20
TJ = 25 oC
15
TJ = 125 oC
10
TJ = 100 oC
5
1
0.01
0.1 1
tAV, TIME IN AVALANCHE (ms)
10
Figure9. UnclampedInductive
Switching Capability
40
100
100 μs
10
1 THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
0.1 TJ = MAX RATED
RθJA = 125 oC/W
TA = 25 oC
0.01
0.01
0.1
1
1 ms
10 ms
100 ms
1s
10 s
DC
10 100200
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
50
40
30
VGS = 4.5 V
20
VGS = 10 V
10
0
25
Limited by Package
RθJC = 5.0 oC/W
50 75 100 125
TC, CASE TEMPERATURE (oC)
150
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
1000
100
SINGLE PULSE
RθJA = 125 oC/W
10
1
0.110-4 10-3 10-2 10-1
1
10
t, PULSE WIDTH (sec)
100 1000
Figure 12. Single Pulse Maximum
Power Dissipation
©2013 Fairchild Semiconductor Corporation
FDMS3669S Rev.C1
5
www.fairchildsemi.com

FDMS3669S Datasheet PDF



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