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FDMS3669S Datasheet

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FDMS3669S pdf
Typical Characteristics (Q1 N-Channel) TJ = 25 °C unless otherwise noted
50
VGS = 10 V
VGS = 6 V
40
VGS = 4.5 V
30
VGS = 4 V
5
VGS = 3.5 V
4
3
20 2
VGS = 4 V
VGS = 6 V VGS = 4.5 V
10
0
0.0
VGS = 3.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0.5 1.0 1.5 2.0 2.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
1
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0 10 20
30
ID, DRAIN CURRENT (A)
VGS = 10 V
40 50
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
ID = 13 A
VGS = 10 V
1.4
30
ID = 13 A
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
25
1.2 20
TJ = 125 oC
1.0 15
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance
vs Junction Temperature
10
TJ = 25 oC
5
2468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
10
50
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
40
VDS = 5 V
30
TJ = 150 oC
20
TJ = 25 oC
10
TJ = -55 oC
0
1234
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
5
50
VGS = 0 V
10
TJ = 150 oC
1
TJ = 25 oC
TJ = -55 oC
0.1
0.0
0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2013 Fairchild Semiconductor Corporation
FDMS3669S Rev.C1
4
www.fairchildsemi.com
Fairchild Semiconductor
Fairchild Semiconductor



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