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FDMS3669S Datasheet
MOSFET
Fairchild Semiconductor
Fairchild Semiconductor


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FDMS3669S pdf
Typical Characteristics (continued)
SyncFETTM Schottky body diode
Characteristics
Fairchild’s SyncFETTM process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 27 shows the reverse recovery
characteristic of the FDMS3669S.
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
20
15
didt = 300 A/μs
10
5
0
-5
-40 0 40 80 120 160
TIME (ns)
Figure 27. FDMS3669S SyncFETTM body
diode reverse recovery characteristic
10-2
10-3 TJ = 125 oC
10-4 TJ = 100 oC
10-5
10-6
0
TJ = 25 oC
5 10 15 20 25
VDS, REVERSE VOLTAGE (V)
30
Figure 28. SyncFETTM body diode reverse
leakage versus drain-source voltage
©2013 Fairchild Semiconductor Corporation
FDMS3669S Rev.C1
10
www.fairchildsemi.com

FDMS3669S Datasheet PDF


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