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FDMS3668S Datasheet

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FDMS3668S datasheet pdf
Typical Characteristics (Q2 N-Channel) TJ = 25 oC unlenss otherwise noted
60
VGS = 10 V
VGS = 4.5 V
VGS = 3.5 V
40
VGS = 3 V
VGS = 2.5 V
20
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0.0 0.3 0.6 0.9 1.2 1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 14. On-Region Characteristics
4
PULSE DURATION = 80 μs
VGS = 2.5 V DUTY CYCLE = 0.5% MAX
3
VGS = 3 V
2
VGS = 3.5 V
1
VGS = 4.5 V
VGS = 10 V
0
0 20 40
ID, DRAIN CURRENT (A)
60
Figure 15. Normalized on-Resistance vs Drain
Current and Gate Voltage
1.6
ID = 18 A
VGS = 10 V
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 16. Normalized On-Resistance
vs Junction Temperature
20
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
15
ID = 18 A
10
TJ = 125 oC
5
TJ = 25 oC
0
2468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 17. On-Resistance vs Gate to
Source Voltage
10
60
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VDS = 5 V
40
TJ = 125 oC
20
TJ = 25 oC
TJ = -55 oC
0
1.0 1.5 2.0 2.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 18. Transfer Characteristics
3.0
100
VGS = 0 V
10
1
TJ = 125 oC
0.1
0.01
TJ = 25 oC
TJ = -55 oC
0.001
0.0
0.2 0.4 0.6 0.8
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 19. Source to Drain Diode
Forward Voltage vs Source Current
1.0
©2012 Fairchild Semiconductor Corporation
FDMS3668S Rev.C3
7
www.fairchildsemi.com
Fairchild Semiconductor
Fairchild Semiconductor



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