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FDMS3664S Datasheet

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FDMS3664S datasheet pdf
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Drain-Source Diode Characteristics
VGS = 0 V, IS = 13 A
(Note 2) Q1
VSD
Source to Drain Diode
Forward Voltage
VGS = 0 V, IS = 2 A
VGS = 0 V, IS = 25 A
(Note 2) Q1
(Note 2) Q2
VGS = 0 V, IS = 2 A
(Note 2) Q2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Q1:
IF = 13 A, di/dt = 100 A/μs
Q2:
IF = 25 A, di/dt = 300 A/μs
Q1
Q2
Q1
Q2
0.8 1.2
0.7 1.2
0.8 1.2
0.6 1.2
26 42
24 38
10 20
22 34
V
ns
nC
Notes:
1: RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined
by the user's board design.
a. 57 °C/W when mounted on
a 1 in2 pad of 2 oz copper
b. 50 °C/W when mounted on
a 1 in2 pad of 2 oz copper
c. 125 °C/W when mounted on a
minimum pad of 2 oz copper
d. 120 °C/W when mounted on a
minimum pad of 2 oz copper
2: Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3: As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied with the negative Vgs rating.
4: EAS of 33 mJ is based on starting TJ = 25 oC; N-ch: L = 1.9 mH, IAS = 6 A, VDD = 27 V, VGS = 10 V. 100% test at L= 0.1 mH, IAS = 16 A.
5: EAS of 48 mJ is based on starting TJ = 25 oC; N-ch: L = 0.6 mH, IAS = 13 A, VDD = 27 V, VGS = 10 V. 100% test at L= 0.1 mH, IAS = 23 A.
©2012 Fairchild Semiconductor Corporation
FDMS3664S Rev.C5
3
www.fairchildsemi.com
Fairchild Semiconductor
Fairchild Semiconductor



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