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(Datasheet) FDMS3664S

MOSFET

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FDMS3664S pdf
Typical Characteristics (continued)
SyncFETTM Schottky body diode
Characteristics
Fairchild’s SyncFETTM process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 27 shows the reverse recovery
characteristic of the FDMS3664S.
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
30
25
20
didt = 300 A/μs
15
10
5
0
-5
0 50 100 150 200 250
TIME (ns)
Figure 27. FDMS3664S SyncFETTM body
diode reverse recovery characteristic
10-2
TJ = 125 oC
10-3
TJ = 100 oC
10-4
10-5
10-6
0
TJ = 25 oC
5 10 15 20
VDS, REVERSE VOLTAGE (V)
25
Figure 28. SyncFETTM body diode reverse
leakage versus drain-source voltage
©2012 Fairchild Semiconductor Corporation
FDMS3664S Rev.C5
10
www.fairchildsemi.com
Fairchild Semiconductor
Fairchild Semiconductor


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