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FDMS3664S Datasheet
MOSFET
Fairchild Semiconductor
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FDMS3664S pdf
FDMS3664S
PowerTrench® Power Stage
January 2015
Asymmetric Dual N-Channel MOSFET
Features
General Description
Q1: N-Channel
„ Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A
„ Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A
Q2: N-Channel
„ Max rDS(on) = 2.6 mΩ at VGS = 10 V, ID = 25 A
„ Max rDS(on) = 3.2 mΩ at VGS = 4.5 V, ID = 22 A
„ Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
„ MOSFET integration enables optimum layout for
lower circuit inductance and reduced switch node
ringing
„ RoHS Compliant
This device includes two specialized N-Channel MOSFETs in a
dual PQFN package. The switch node has been internally
connected to enable easy placement and routing of synchronous
buck converters. The control MOSFET (Q1) and synchronous
SyncFETTM (Q2) have been designed to provide optimal power
efficiency.
Applications
„ Computing
„ Communications
„ General Purpose Point of Load
„ Notebook VCORE
Pin 1
Pin 1
G1
D1
D1
D1
D1
S2 5
Q2
4 D1
PHASE
(S1/D2)
G2
S2
S2
S2
Top Power 56 Bottom
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
S2 6
S2 7
G2 8
PHASE
3 D1
2 D1
Q1 1 G1
Symbol
VDS
VDSt
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Drain to Source Transient Voltage ( tTransient < 100 ns)
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
(Note 3)
TC = 25 °C
TC = 25 °C
TA = 25 °C
TA = 25 °C
TA = 25 °C
Q1 Q2
30 30
33 33
±20 ±12
30 60
60
131a
118
251b
40
334
2.21a
11c
100
485
2.51b
11d
-55 to +150
Units
V
V
V
A
mJ
W
°C
Thermal Characteristics
RθJA
RθJA
RθJC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Package Marking and Ordering Information
571a
1251c
2.9
501b
1201d
2.3
°C/W
Device Marking
22CF
10OD
Device
FDMS3664S
Package
Power 56
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMS3664S Rev.C5
1
www.fairchildsemi.com

FDMS3664S Datasheet PDF



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