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FDMS3662 Datasheet

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FDMS3662 pdf
November 2014
FDMS3662
N-Channel Power Trench® MOSFET
100V, 39A, 14.8mΩ
Features
General Description
„ Max rDS(on) = 14.8mΩ at VGS = 10V, ID = 8.9A
„ Advanced Package and Silicon combination for low rDS(on)
„ MSL1 robust package design
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
„ 100% UIL Tested
„ RoHS Compliant
Application
„ DC - DC Conversion
Top Bottom
Pin 1
Pin 1
S
S
S
G
D
D
D
D
Power 56
S
S
S
G
D
D
D
D
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
TC = 25°C
TA = 25°C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
100
±20
39
8.9
90
384
104
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.2
50
°C/W
Device Marking
FDMS3662
Device
FDMS3662
Package
Power 56
Reel Size
13’’
Tape Width
12mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
FDMS3662 Rev.C3
1
www.fairchildsemi.com
Fairchild Semiconductor
Fairchild Semiconductor



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