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FDMS3660S Datasheet

PowerTrench Power Stage

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FDMS3660S
PowerTrench® Power Stage
Asymmetric Dual N-Channel MOSFET
Features
Q1: N-Channel
„ Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A
„ Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A
Q2: N-Channel
„ Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A
„ Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 27 A
„ Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
„ MOSFET integration enables optimum layout for
lower circuit inductance and reduced switch node
ringing
„ RoHS Compliant
February 2015
General Description
This device includes two specialized N-Channel MOSFETs in a
dual PQFN package. The switch node has been internally
connected to enable easy placement and routing of synchronous
buck converters. The control MOSFET (Q1) and synchronous
SyncFETTM (Q2) have been designed to provide optimal power
efficiency.
Applications
„ Computing
„ Communications
„ General Purpose Point of Load
„ Notebook VCORE
Pin 1
Pin 1
G1
D1
D1
D1
D1
S2 5
Q2
4 D1
PHASE
(S1/D2)
G2
S2
S2
S2
Top Power 56
Bottom
S2 6
S2 7
G2 8
PHASE
3 D1
2 D1
Q1 1 G1
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
RθJA
RθJC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Package Marking and Ordering Information
(Note 3)
TC = 25 °C
TC = 25 °C
TA = 25 °C
TA = 25 °C
TA = 25 °C
Q1 Q2
30 30
±20 ±12
30 60
60
131a
145
301b
40
334
2.21a
11c
120
865
2.51b
11d
-55 to +150
571a
1251c
2.9
501b
1201d
2.2
Units
V
V
A
mJ
W
°C
°C/W
Device Marking
22CF
07OD
Device
FDMS3660S
©2012 Fairchild Semiconductor Corporation
FDMS3660S Rev.C4
Package
Power 56
1
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
Fairchild Semiconductor
Fairchild Semiconductor


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