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FDMS3660AS Datasheet

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FDMS3660AS pdf
Typical Characteristics (Q1 N-Channel) TJ = 25 °C unless otherwise noted
10
ID = 13 A
8
6
4
VDD = 10 V
VDD = 15 V
VDD = 20 V
2
0
0 6 12 18 24
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
5000
1000
Ciss
Coss
100
Crss
f = 1 MHz
VGS = 0 V
10
0.1 1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure8. Capacitance vsDrain
to Source Voltage
30
50
TJ = 100 oC
10
TJ = 125 oC
TJ = 25 oC
1
0.001
0.01 0.1
1
10
tAV, TIME IN AVALANCHE (ms)
Figure9. UnclampedInductive
Switching Capability
100
100
100 μs
10
1 THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
0.1 TJ = MAX RATED
RθJA = 125 oC/W
TA = 25 oC
0.01
0.01 0.1
CURVE BENT TO
MEASURED DATA
1 10
1 ms
10 ms
100 ms
1s
10 s
DC
100200
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
©2013 Fairchild Semiconductor Corporation
FDMS3660AS Rev.C
5
60
48 VGS = 10 V
36
VGS = 4.5 V
24
12
RθJC = 3.5 oC/W
0
25 50 75 100 125
TC, CASE TEMPERATURE (oC)
150
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
1000
100
SINGLE PULSE
RθJA = 125 oC/W
TA = 25 oC
10
1
0.1
10-4 10-3 10-2 10-1 100 101 100 1000
t, PULSE WIDTH (sec)
Figure 12. Single Pulse Maximum
Power Dissipation
www.fairchildsemi.com
Fairchild Semiconductor
Fairchild Semiconductor



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