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FDMS3660AS Datasheet

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FDMS3660AS pdf
Typical Characteristics (Q1 N-Channel) TJ = 25 °C unless otherwise noted
70
VGS = 10 V
VGS = 6 V
56 VGS = 4.5 V
42
VGS = 4 V
28
14
0
0.0
VGS = 3.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0.5 1.0 1.5 2.0 2.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
3.0
Figure 1. On Region Characteristics
6.0
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
4.5
VGS = 3.5 V
VGS = 4 V
3.0
VGS = 4.5 V
1.5
0.0
0
VGS = 6 V VGS = 10 V
14 28 42
ID, DRAIN CURRENT (A)
56
70
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.5
1.4
ID = 13 A
VGS = 10 V
1.3
1.2
1.1
1.0
0.9
0.8
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance
vs Junction Temperature
30
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
24
ID = 13 A
18
12
TJ = 125 oC
6
TJ = 25 oC
0
2 4 6 8 10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
70
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
56
VDS = 5 V
42
TJ = 150 oC
28
TJ = 25 oC
14
TJ = -55 oC
0
1234
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
5
70
VGS = 0 V
10
TJ = 150 oC
1
0.1
TJ = 25 oC
0.01
TJ = -55 oC
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
1.2
©2013 Fairchild Semiconductor Corporation
FDMS3660AS Rev.C
4
www.fairchildsemi.com
Fairchild Semiconductor
Fairchild Semiconductor



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