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(Datasheet) FDMS3660AS

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FDMS3660AS pdf
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Drain-Source Diode Characteristics
VSD
trr
Qrr
Notes:
VGS = 0 V, IS = 13 A
Source to Drain Diode
Forward Voltage
VGS = 0 V, IS = 2 A
VGS = 0 V, IS = 30 A
VGS = 0 V, IS = 2 A
(Note 2)
(Note 2)
(Note 2)
(Note 2)
Reverse Recovery Time
Reverse Recovery Charge
Q1:
IF = 13 A, di/dt = 100 A/μs
Q2:
IF = 30 A, di/dt = 300 A/μs
Q1
Q1
Q2
Q2
Q1
Q2
Q1
Q2
0.84
0.74
0.77
0.48
1.2
1.2
1.2
1.2
25 40
33 53
9 18
41 66
V
ns
nC
1.RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 57 °C/W when mounted on
a 1 in2 pad of 2 oz copper
b. 50 °C/W when mounted on
a 1 in2 pad of 2 oz copper
c. 125 °C/W when mounted on a
minimum pad of 2 oz copper
d. 120 °C/W when mounted on a
minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied with the negative Vgs rating.
4. Pulsed Id limited by junction temperature, td<=100 μS, please refer to SOA curve for more details.
5.
6.
EAS
EAS
of
of
71350mmJJisisbbaaseseddoonnstsatartrintinggTTJ J==2525oCoC; ;NN-c-hch: :LL==33mmHH, I,AISAS==71A0,
VDD = 30 V,
A, VDD = 30
VGS = 10 V.
V, VGS = 10
100% test at
V. 100% test
L= 0.1 mH, IAS = 23 A.
at L= 0.1 mH, IAS = 31
A.
©2013 Fairchild Semiconductor Corporation
FDMS3660AS Rev.C
3
www.fairchildsemi.com
Fairchild Semiconductor
Fairchild Semiconductor


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