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(Datasheet) FDMS3660AS

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FDMS3660AS pdf
Typical Characteristics (continued)
SyncFETTM Schottky body diode
Characteristics
Fairchild’s SyncFETTM process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 27 shows the reverse recovery
characteristic of the FDMS3660AS.
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
35
30
25
20
15
10
5
0
-5
100 150 200 250 300 350 400 450 500
TIME (ns)
Figure 27. FDMS3660AS SyncFETTM Body
Diode Reverse Recovery Characteristic
10-2
TJ = 125 oC
10-3
TJ = 100 oC
10-4
10-5
10-6
0
TJ = 25 oC
5 10 15 20 25
VDS, REVERSE VOLTAGE (V)
30
Figure 28. SyncFETTM Body Diode Reverse
Leakage Versus Drain-Source Voltage
©2013 Fairchild Semiconductor Corporation
FDMS3660AS Rev.C
10
www.fairchildsemi.com
Fairchild Semiconductor
Fairchild Semiconductor


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