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FDMS3660AS Datasheet

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FDMS3660AS pdf
FDMS3660AS
PowerTrench® Power Stage
Asymmetric Dual N-Channel MOSFET
Features
Q1: N-Channel
„ Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A
„ Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A
Q2: N-Channel
„ Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A
„ Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 27 A
„ Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
„ MOSFET integration enables optimum layout for lower circuit
inductance and reduced switch node ringing
„ RoHS Compliant
July 2013
General Description
This device includes two specialized N-Channel MOSFETs in a
dual PQFN package. The switch node has been internally
connected to enable easy placement and routing of synchronous
buck converters. The control MOSFET (Q1) and synchronous
SyncFETTM (Q2) have been designed to provide optimal power
efficiency.
Applications
„ Computing
„ Communications
„ General Purpose Point of Load
„ Notebook VCORE
Pin 1
Pin 1
G1
D1
D1
D1
D1
S2 5
Q2
4 D1
PHASE
S2 6
PHASE
3 D1
(S1/D2)
G2
S2 7
2 D1
S2
S2
S2
G2 8
Q1 1 G1
Top Bottom
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
RθJA
RθJC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Package Marking and Ordering Information
(Note 3)
TC = 25 °C
TA = 25 °C
(Note 4)
TA = 25 °C
TA = 25 °C
Q1 Q2
30 30
±20 ±12
56
131a
130
301b
70
735
2.21a
1.01c
140
1506
2.51b
1.01d
-55 to +150
Units
V
V
A
mJ
W
°C
571a
1251c
3.5
501b
1201d
2.2
°C/W
Device Marking
27CF
32CD
Device
FDMS3660AS
Package
Power 56
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
©2013 Fairchild Semiconductor Corporation
FDMS3660AS Rev.C
1
www.fairchildsemi.com
Fairchild Semiconductor
Fairchild Semiconductor


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