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FDMS3626S Datasheet

MOSFET

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FDMS3626S pdf
December 2011
FDMS3626S
PowerTrench® Power Stage
25V Asymmetric Dual N-Channel MOSFET
Features
Q1: N-Channel
„ Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17.5 A
„ Max rDS(on) = 5.7 mΩ at VGS = 4.5 V, ID = 16 A
Q2: N-Channel
„ Max rDS(on) = 2.6 mΩ at VGS = 10 V, ID = 25 A
„ Max rDS(on) = 3.2 mΩ at VGS = 4.5 V, ID = 22 A
„ Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
„ MOSFET integration enables optimum layout for
lower circuit inductance and reduced switch node
ringing
„ RoHS Compliant
General Description
This device includes two specialized N-Channel MOSFETs in a
dual PQFN package. The switch node has been internally
connected to enable easy placement and routing of synchronous
buck converters. The control MOSFET (Q1) and synchronous
SyncFET (Q2) have been designed to provide optimal power
efficiency.
Applications
„ Computing
„ Communications
„ General Purpose Point of Load
„ Notebook VCORE
Pin 1
Pin 1
G1 D1 D1 D1
D1
PHASE
(S1/D2)
G2S2S2 S2
Top
Power 56
Bottom
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
TC = 25 °C
TA = 25 °C
(Note 3)
TA = 25 °C
TA = 25 °C
Q1 Q2
25 25
±12 ±12
30
17.51a
55
251b
70 100
29
2.21a
1.01c
45
2.51b
1.01d
-55 to +150
Units
V
V
A
mJ
W
°C
RθJA
RθJA
RθJC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Package Marking and Ordering Information
571a
1251c
3.0
501b
1201d
3.0
°C/W
Device Marking
08OD
10OD
Device
FDMS3626S
Package
Power 56
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
©2011 Fairchild Semiconductor Corporation
FDMS3626S Rev.C2
1
www.fairchildsemi.com
Fairchild Semiconductor
Fairchild Semiconductor


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