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FDMS3624S Datasheet
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FDMS3624S pdf
Typical Characteristics (Q2 N-Channel) TJ = 25 °C unless otherwise noted
120
100
80
60
40
20
0
0.0
VGS = 10 V
VGS = 4.5 V
VGS = 3.5 V
VGS = 3 V
VGS = 2.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0.3 0.6 0.9 1.2 1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
4
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
3 VGS = 2.5 V
2 VGS = 3 V VGS = 3.5 V
1
VGS = 4.5 V VGS = 10 V
0
0 20 40 60 80 100 120
ID, DRAIN CURRENT (A)
Figure 14. On-Region Characteristics
Figure 15. Normalized on-Resistance vs Drain
Current and Gate Voltage
1.6
ID = 30 A
VGS = 10 V
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 16. Normalized On-Resistance
vs Junction Temperature
7
PULSE DURATION = 80 μs
6 DUTY CYCLE = 0.5% MAX
5
ID = 30 A
4
3
TJ = 125 oC
2
1 TJ = 25 oC
0
2 4 6 8 10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 17. On-Resistance vs Gate to
Source Voltage
120
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
100
VDS = 5 V
80
60
TJ = 125 oC
TJ = 25 oC
40
TJ = -55 oC
20
0
1.0 1.5 2.0 2.5
VGS, GATE TO SOURCE VOLTAGE (V)
3.0
Figure 18. Transfer Characteristics
200
100 VGS = 0 V
10
1
0.1
0.01
TJ = 125 oC
TJ = 25 oC
TJ = -55 oC
0.001
0.0
0.2 0.4 0.6 0.8
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.0
Figure 19. Source to Drain Diode
Forward Voltage vs Source Current
©2011 Fairchild Semiconductor Corporation
FDMS3624S Rev.C2
7
www.fairchildsemi.com

FDMS3624S Datasheet PDF



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