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(Datasheet) FDMS3622S

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FDMS3622S pdf
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted
10
ID = 17.5 A
8
6
4
VDD = 10 V
VDD = 15 V
VDD = 13 V
2
0
0 4 8 12 16 20 24 28
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
50
TJ = 25 oC
10
TJ = 100 oC
TJ = 125 oC
1
0.001
0.01 0.1
1
tAV, TIME IN AVALANCHE (ms)
10
50
Figure9. UnclampedInductive
Switching Capability
2000
1000
100
Ciss
Coss
f = 1 MHz
Crss
VGS = 0 V
10
0.1 1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure8. CapacitancevsDrain
to Source Voltage
80
70
60
VGS = 10 V
50
VGS = 4.5 V
40
30
20
Limited by Package
10 RθJC = 3.0 oC/W
0
25 50 75 100 125
TC, CASE TEMPERATURE (oC)
150
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
100
100 μs
10
1 THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
0.1 TJ = MAX RATED
RθJA = 125 oC/W
TA = 25 oC
0.01
0.01
0.1
1
1 ms
10 ms
100 ms
1s
10s
DC
10 100200
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
1000
100
SINGLE PULSE
RθJA = 125 oC/W
10
1
0.5
10-4 10-3 10-2 10-1
1
10
t, PULSE WIDTH (sec)
100 1000
Figure 12. Single Pulse Maximum
Power Dissipation
©2011 Fairchild Semiconductor Corporation
FDMS3622S Rev.C2
5
www.fairchildsemi.com
Fairchild Semiconductor
Fairchild Semiconductor


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