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FDMS3615S Datasheet
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FDMS3615S pdf
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted
10
ID = 16 A
8
6
4
2
VDD = 10 V
VDD = 13 V
VDD = 16 V
0
0 5 10 15 20
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
3000
1000
Ciss
Coss
100 f = 1 MHz
Crss
VGS = 0 V
50
0.1
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
25
Figure8. CapacitancevsDrain
to Source Voltage
20
10 TJ = 25 oC
TJ = 100 oC
TJ = 125 oC
20
15
10
Limited by Package
5
RθJA = 55 oC/W
VGS = 10 V
VGS = 4.5 V
1
0.001
0.01 0.1
1
10
tAV, TIME IN AVALANCHE (ms)
Figure9. UnclampedInductive
Switching Capability
100
100
100 μs
10
1 ms
1 THIS AREA IS
LIMITED BY rDS(on)
10 ms
100 ms
SINGLE PULSE
0.1 TJ = MAX RATED
RθJA = 125 oC/W
TA = 25 oC
0.01
0.01
0.1
1
1s
10s
DC
10 100200
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
0
25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (oC)
Figure 10. Maximum Continuous Drain
Current vs Ambient Temperature
1000
100
SINGLE PULSE
RθJA = 125 oC/W
10
1
0.5
10-4 10-3 10-2 10-1
1
10
t, PULSE WIDTH (sec)
100 1000
Figure 12. Single Pulse Maximum
Power Dissipation
©2011 Fairchild Semiconductor Corporation
FDMS3615S Rev.C6
5
www.fairchildsemi.com

FDMS3615S Datasheet PDF



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