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FDMS3615S Datasheet
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FDMS3615S pdf
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted
45
36
27
18
9
0
0.0
VGS = 4 V
VGS = 3.5 V
VGS = 10 V
VGS = 6 V
VGS = 3 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0.5 1.0 1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
8
VGS = 3 V
6
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
4
VGS = 3.5 V
2 VGS = 4 V
VGS = 6 V
VGS = 10 V
0
0 9 18 27 36 45
ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
ID = 16 A
VGS = 10 V
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance
vs Junction Temperature
30
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
25
ID = 16 A
20
15
TJ = 125 oC
10
5
TJ = 25 oC
0
2468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
45
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
36
VDS = 5 V
27
TJ = 150 oC
18
TJ = 25 oC
9
TJ = -55 oC
0
1234
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
50
VGS = 0 V
10
1 TJ = 150 oC
0.1
0.01
TJ = 25 oC
TJ = -55 oC
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2011 Fairchild Semiconductor Corporation
FDMS3615S Rev.C6
4
www.fairchildsemi.com

FDMS3615S Datasheet PDF



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