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FDMS3615S Datasheet

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FDMS3615S datasheet pdf
Typical Characteristics (continued)
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 27 shows the reverse recovery
characteristic of the FDMS3615S.
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase the
power in the device.
20
15
10
5
0
-5
0
di/dt = 300 A/μs
50 100
TIME (ns)
150
200
Figure 27. FDMS3615S SyncFET body
diode reverse recovery characteristic
10-2
TJ = 125 oC
10-3
TJ = 100 oC
10-4
10-5
10-6
0
TJ = 25 oC
5 10 15 20
VDS, REVERSE VOLTAGE (V)
25
Figure 28. SyncFET body diode reverse
leakage versus drain-source voltage
©2011 Fairchild Semiconductor Corporation
FDMS3615S Rev.C6
10
www.fairchildsemi.com
Fairchild Semiconductor
Fairchild Semiconductor



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