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FDMS36101L_F085 Datasheet

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FDMS36101L_F085 pdf
FDMS36101L_F085
N-Channel Power Trench® MOSFET
100V, 38A, 26mΩ
June 2013
Features
„ Typ rDS(on) = 18mΩ at VGS = 10V, ID = 20A
„ Typ Qg(tot) = 70nC at VGS = 10V, ID = 20A
„ UIS Capability
„ RoHS Compliant
„ Qualified to AEC Q101
Applications
„ Automotive Engine Control
„ Powertrain Management
„ Solenoid and Motor Drivers
„ Integrated Starter/alternator
„ Primary Switch for 12V Systems
For current package drawing, please refer to the Fairchild
website at www.fairchildsemi.com/packaging
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous (VGS=10) (Note 1)
Pulsed Drain Current
EAS Single Pulse Avalanche Energy
PD
Power Dissipation
Derate above 25oC
TJ, TSTG
RθJC
RθJA
Operating and Storage Temperature
Thermal Resistance Junction to Case
Maximum Thermal Resistance Junction to Ambient
TC = 25°C
TC = 25°C
(Note 2)
(Note 3)
Ratings
100
±20
38
See Figure4
101
94
0.63
-55 to + 175
1.6
50
Units
V
V
A
mJ
W
W/oC
oC
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
Device
FDMS36101L FDMS36101L_F085
Package
Power 56
Reel Size
13”
Tape Width
12mm
Quantity
3000 units
Notes:
1: Current is limited by bondwire configuration.
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©2013 Fairchild Semiconductor Corporation
FDMS36101L_F085 Rev. C1
1
www.fairchildsemi.com
Fairchild Semiconductor
Fairchild Semiconductor



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