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FDMS3604S Datasheet

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Typical Characteristics (Q1 N-Channel) TJ = 25 °C unless otherwise noted
40
VGS = 10 V
VGS = 6 V
30
VGS = 4.5 V
VGS = 4 V
20
10
0
0.0
VGS = 3.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0.2 0.4 0.6 0.8
VDS, DRAIN TO SOURCE VOLTAGE (V)
1.0
Figure 1. On Region Characteristics
4
VGS = 3.5 V
3
2
1
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 4 V
VGS = 4.5 V
VGS = 6 V
VGS = 10 V
0
0 10 20 30
ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
40
1.6
ID = 13 A
VGS = 10 V
1.4
1.2
1.0
20
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
16
ID = 13 A
12
TJ = 125 oC
8
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance
vs Junction Temperature
4
TJ = 25 oC
0
2468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
10
40
100
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
30
10 VDS = 5 V
20
TJ = 150 oC
100us
1 ms
1
THIS AREA IS
TJ = 25 oC
10 ms
LIMITED BY rDS(on)
100 ms
10
SINGLE PULSE
1s
0.1 TJ = MAX RATED
TJ = -5510osC
RθJA = 125 oC/W
0
1.5
TA
=
25
2oC.0
2.5
3.0
DC
3.5 4.0
0.01
0.01
V0G.S1, GATE TO S1OURCE VOL1T0AGE (V) 100 200
Figure V5D.S, TDRraAInNstofeSrOUCRhCaErVaOcLtTeArGisEt(Vic) s
40
100100 VGS = 0 V
1001
TJ = 150 oC
01.01
SINGLE PULSE
RθJA = 125 oC/W
TA = 25 oC
TJ = 25 oC
0.01
1
TJ = -55 oC
0.001
0.0
0.1
10-4
0.2 0.4 0.6 0.8 1.0
1V0S-3D, BO1D0Y-2DIOD1E0-F1ORWA1RD VO1L0TAGE 1(V0)0
t, PULSE WIDTH (sec)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
1.2
1000
©2011 Fairchild Semiconductor Corporation
FDMS3604S Rev.C5
4
www.fairchildsemi.com
Fairchild Semiconductor
Fairchild Semiconductor



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