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FDMS3604AS Datasheet
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FDMS3604AS pdf
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Drain-Source Diode Characteristics
VSD
Source to Drain Diode
Forward Voltage
VGS = 0 V, IS = 13 A
VGS = 0 V, IS = 23A
(Note 2)
(Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Q1
IF = 13 A, di/dt = 100 A/μs
Q2
IF = 23 A, di/dt = 300 A/μs
Q1
Q2
Q1
Q2
Q1
Q2
0.8 1.2
0.8 1.2
25 40
32 51
9 18
39 62
V
ns
nC
Notes:
1: RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined
by the user's board design.
a. 57 °C/W when mounted on
a 1 in2 pad of 2 oz copper
b. 50 °C/W when mounted on
a 1 in2 pad of 2 oz copper
c. 125 °C/W when mounted on a
minimum pad of 2 oz copper
d. 120 °C/W when mounted on a
minimum pad of 2 oz copper
2: Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3: As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
4: EAS of 40 mJ is based on starting TJ = 25 oC; N-ch: L = 1 mH, IAS = 9 A, VDD = 27 V, VGS = 10 V. 100% test at L= 0.3 mH, IAS = 14 A.
5: EAS of 112 mJ is based on starting TJ = 25 oC; N-ch: L = 1 mH, IAS = 15 A, VDD = 27 V, VGS = 10 V. 100% test at L= 0.3 mH, IAS = 22 A.
©2011 Fairchild Semiconductor Corporation
FDMS3604AS Rev.C4
3
www.fairchildsemi.com

FDMS3604AS Datasheet PDF



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